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Sanyo Semicon Device was known for its high-quality products and its commitment to meeting the needs of its customers. The company had a strong focus on research and development and was involved in the development of new technologies and products for the semiconductor industry. Sanyo Semicon Device's products were widely used in a variety of applications and helped support the growth of the electronics industry.

T1 - The oxygen reduction reaction mechanism on Pt(111) from density functional theory calculations

Sanyo Semiconductor Device Corporation, or Sanyo Semicon Device, was a subsidiary of Sanyo Electric Co., Ltd., a Japanese electronics company. Sanyo Semicon Device was a manufacturer of semiconductor devices, including diodes, transistors, and other components for consumer electronics, automotive, and industrial applications. The company was established in 1970 and was headquartered in Osaka, Japan. Providing for a Curator of the White House and establishing a Committee for the Preservation of the White House Setting aside for the use of the United States certain public lands and other public property located at the Makua Military Reservation, Hawaii Creating an emergency board to investigate disputes between the carriers represented by the Eastern, Western and Southeastern Carriers' Conference Committee, and certain of their employees Prescribing regulations governing the allowance of travel expenses of claimants and beneficiaries of the Veterans' Administration and their attendants

Relating to certain allowances and benefits for civilian employees of nonappropriated fund instrumentalities of the Armed ForcesPersons unable to file electronically should submit an original and 5 copies of the intervention or protest to the Federal Energy Regulatory Commission, 888 First Street NE, Washington, DC 20426.

Providing for the transfer of lands in Georgia from the Chattahoochee National Forest to the Oconee National Forest; the addition of land in Indiana to the Hoosier National Forest; the addition of land in Oklahoma to the Quachita National Forest; and the adjustment of the boundary of the Tombigbee National Forest, Mississippi

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Designating the Secretary of the Interior as a member of the Interagency Committee on Export Expansion AB - We study the oxygen reduction reaction (ORR) mechanism on a Pt(1 1 1) surface using density functional theory calculations We find that at low overpotentials the surface is covered with a half dissociated water layer We estimate the barrier for proton transfer to this surface and the barrier for proton transport parallel to the surface within the half dissociated water network We find both barriers to be small The only potentially dependent step is the proton transfer from water to the half dissociated water layer We find that ORR proceeds via four direct e(-) reductions without significant peroxide formation We show that the oxygen-oxygen bond breaking is dependent on the local surface environment The minimum energy pathway is constructed and we confirm that OH removal from the surface determines the overpotential Suspension of the provisions of section 5770 of Title 10, United States Code, relating to promotion of certain officers of the regular Navy